v rrm = 100 v - 600 v i f = 70 a features ? high surge capability do-5 package ? types up to 600 v v rrm parameter symbol fr70b(r)02 f r70d(r)02 fr70g(r)02 unit re p etitive p eak reverse v 100 200 400 v fr70j(r)02 600 FR70B02 thru fr70jr02 maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions silicon fast recover y diode pp voltage v rrm 100 200 400 v rms reverse voltage v rms 70 140 280 v dc blocking voltage v dc 100 200 400 v continuous forward current i f 70 70 70 a operating temperature t j -40 to 125 -40 to 125 -40 to 125 c storage temperature t stg -40 to 150 -40 to 150 -40 to 150 c parameter symbol fr70b(r)02 f r70d(r)02 fr70g(r)02 unit diode forward voltage 1.5 1.5 1.5 25 25 25 a 15 15 15 ma recovery time maximum reverse recovery time t rr 200 200 200 ns thermal characteristics thermal resistance, junction - case r thjc 0.8 0.8 0.8 c/w 1.5 600 420 600 70 870 i f =0.5 a, i r =1.0 a, i rr = 0.25 a v r = 100 v, t j = 125 c v 25 15 250 0.8 a 870 -40 to 125 -40 to 150 fr70j(r)02 v r = 100 v, t j = 25 c i f = 70 a, t j = 25 c t c 100 c conditions 870 870 t c = 25 c, t p = 8.3 ms electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f www.genesicsemi.com 1
FR70B02 thru fr70jr02 www.genesicsemi.com 2
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